An avalanche photodiode includes: a first contact layer; a light absorbing layer located on the first contact layer and having a multi-quantum well structure; a first electric field control layer located on the light absorbing layer; and a carrier multiplication layer located on the first electric field control layer. 0000001107 00000 n
out of the active area of the APD. This structure provides ultra high sensitivity at 400-1000 nm. The most critical device parameters of APD include the avalanche breakdown voltage and dark current. 0000001555 00000 n
Nano- multiplication- region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection … This structure irremediably suffers from premature edge breakdown. • Se concentrer sur les entreprises clés du marché Photodiode à avalanche APD pour définir, décrire et examiner les ventes, la part de marché, le volume, la valeur, le développement récent et le paysage de la concurrence sur le marché. cause a fraction of them to become part of the photocurrent. The photodiode reach-through structure is of an n PLU-p-(pi) - p + type with an under-contact ring and a channel stopper. Avalanche photodiodes (APDs) are key optical receivers due to their performance advantages of high speed, high sensitivity, and low noise. 0000011144 00000 n
structure avalanche photodiodes,” IEEE Trans. APDs. This process is known as avalanche
0000012164 00000 n
Avalanche photodiode is basically a PN junction diode which operates in the avalanche breakdown region. H�b```f``9��d�2�1 +P����F����a�Ŝ̕M�+�^�w`hY�膤�A'�SK�Hꊇ�n:+9� ��lj���Pg"�D��ĕ�ڂ�t���%�N� �u�F�H�H0[��]�l� �Hp�Z�Oꁴk�5�0�poXǹ�t�r^��Z�20s3�c](����a�h�Z*�ф��� �+�U��xց� 0 B,;�
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